Referinta: SSDPR-CX400-512-G2 3
Marca: GOODRAM
GOODRAM SSD CX400 512GB SSDPR-CX400-512
SSD Goodram CX400 2.5", 512GB, SATA III, R/W 550/490 Mb/s, 7mm
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Referinta: SSDPR-CX400-512-G2 3
Marca: GOODRAM
SSD Goodram CX400 2.5", 512GB, SATA III, R/W 550/490 Mb/s, 7mm
Referinta: SSDPR-CL100-120-G3 3
Marca: GOODRAM
SSD Goodram, CL100, 120GB, 2.5", SATA III (6 GB/s), R/W speed: up to 485MB/s/380MB/s
Referinta: MZ-V7S250BW A
Marca: SAMSUNG
Factor formaM.2 22x80mmCapacitate de stocare250 GBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate17000 IOPSMaximum
Referinta: MZ-V7S500BW A
Marca: SAMSUNG
Factor formaM.2 22x80mmCapacitate de stocare500 GBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum
Referinta: MZ-V7P1T0BW A
Marca: SAMSUNG
Factor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate500000 IOPSM
Referinta: MZ-V7P512BW A
Marca: SAMSUNG
Factor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate370000 IOP
Referinta: MZ-V7S1T0BW A
Marca: SAMSUNG
Factor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum R
Referinta: MZ-V7S2T0BW A
Marca: SAMSUNG
Locatie dispozitivInternFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read
Referinta: MZ-76E4T0B/EU A
Marca: SAMSUNG
Referinta: SSDPEKKW020T8X1 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Referinta: SA400S37/120G A
Marca: KINGSTON
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare120 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellCuloare la exteriorNegruMaximum Sequential Read
Referinta: WDS100T2B0A A
Marca: Western Digital
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCertificariFCC, UL, TUV, KC, BSMI, VCCIFlash Memory Cell TechnologyTriple-Level CellMaximum Ra
Referinta: MZ-76P256B/EU A
Marca: SAMSUNG
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare256 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
Referinta: MZ-76E500B/EU A
Marca: SAMSUNG
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare500 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
Referinta: MZ-76E250B/EU A
Marca: SAMSUNG
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare250 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
Referinta: SSDPEKKW256G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti